The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 1991

Filed:

Jan. 04, 1990
Applicant:
Inventors:

Karl L Wang, Austin, TX (US);

Ray Chang, Austin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365203 ; 36518905 ; 3652335 ; 307465 ; 307480 ; 307481 ;
Abstract

An integrated circuit memory with improved di/dt control. The memory stores a plurality of data bits at intersections of word lines and bit line pairs. In response to a change in at least one of a plurality of address signals during a read cycle, first and second precharge signals are asserted, the second precharge signal asserted after the first precharge signal. An output buffer provides a data output signal at a voltage between a logic high and a logic low voltage in response to an assertion of the second precharge signal, and provides said data output signal corresponding to a voltage on an enabled bit line pair in response to a negation of the first precharge signal. Thus, the voltage on the data output signal changes less when the data bit is provided during the data period. The memory thus improves di/dt for a given access time, or conversely, allows reduced access time for a given di/dt.


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