The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 1991
Filed:
Feb. 07, 1989
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device includes a first conductor layer into which is diffused an impurity for lowering the resistance, and a second conductor layer provided on the upper side of the first conductor layer through a stopper layer which suppresses the out-diffusion of the impurity. By virtue of the existence of the stopper layer, it is possible to inhibit the above-described impurity from being diffused into the second conductor layer. In SRAM, resistance variations between high-resistance elements which correspond to the second conductor layer can be suppressed, so that it is possible to prevent the lowering of the yield with respect to the electrical reliability. In SRAM, further, the resistance of the high-resistance elements is not lowered; therefore, it is possible to reduce the power consumption.