The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 1991
Filed:
Apr. 14, 1989
Kenji Nishida, Inagi, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
A diffusion barrier structure includes a first barrier layer provided on a substrate of a semiconductor device for preventing transport of component elements of the substrate and the electrode from passing therethrough by diffusion. An interface layer is formed in the first barrier layer adjacent to a top surface of the first barrier layer for eliminating the effect of microstructure in the first barrier layer on crystal growth to be made on the first barrier layer. A second barrier layer of a same material as the material of the first barrier layer is provided on the first barrier layer so as to be sandwiched between the first barrier layer and the metal electrode for preventing the component elements from being transported therethrough by diffusion.