The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 1991
Filed:
Mar. 29, 1988
Michael Hack, Mountain View, CA (US);
John G Shaw, Portola Valley, CA (US);
Michael Shur, Golden Valley, MN (US);
Xerox Corporation, Stamford, CT (US);
Abstract
A thin film transistor including a substrate upon which are supported a gate electrode layer, a gate dielectric layer, at least one finger-like source electrode, a semiconductor layer overlying the gate dielectric layer and at least partially surrounding the source electrode, and a drain electrode layer contiguous with the semiconductor layer. The length of the current path between the source electrode and the drain electrode layer is defined by a first path portion located at the semiconductor/gate dielectric interface and extending, between adjacent source elements, substantially parallel to the interface, and a second path portion whose length is substantially coextensive with the thickness of the semiconductor layer.