The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 1991

Filed:

Sep. 08, 1989
Applicant:
Inventors:

Shiro Satoh, Ogawara, JP;

Noriaki Onodera, Sendai, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 60 ; 357 68 ; 372 46 ; 372 50 ; 372 92 ;
Abstract

A semiconductor light emitting device comprises a semiconductor substrate of a first conductivity type; an electric current blocking layer formed on one main face of the substrate and including a semiconductor of a second conductivity type opposite to the first conductivity type and having an opening reaching the main face; a first semiconductor layer of the first conductivity type formed on the electric current blocking layer and a portion of the main face on which the opening is disposed; a second semiconductor layer stacked on the first semiconductor layer and forming a hetero-junction together with the first semiconductor layer; a semiconductor layer for electrode of the second conductivity type formed on the second semiconductor layer and having a window reaching the second conductor layer in a position corresponding to the opening; a first electrode metallic layer formed on the electrode semiconductor layer except for the window; and a second electrode metallic layer formed on the other main face of the substrate. The window has a flat shape composed of a substantially circular or rectangular shape and has a size substantially less than the size of the opening. Portions of the first and second semiconductor layers corresponding to the opening function as a light emitting region by flowing an electric current between the first and second electrode metallic layers, and a light generated from the light emitting region is outputted through the window in a direction substantially perpendicular to the substrate.


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