The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 1991

Filed:

Jun. 13, 1989
Applicant:
Inventors:

Gregor Campbell, Glendale, CA (US);

Robert W Conn, Los Angeles, CA (US);

Tatsuo Shoji, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20429806 ; 20429807 ; 20429816 ; 20429833 ; 20429834 ; 20429837 ; 20429818 ; 20429819 ; 156345 ; 118723 ; 31511141 ; 42218605 ;
Abstract

The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).


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