The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 1991
Filed:
Jul. 03, 1989
Milton L Noble, Liverpool, NY (US);
Albert F Milton, Syracuse, NY (US);
Darrel W Endres, Liverpool, NY (US);
Douglas W Dietz, Liverpool, NY (US);
General Electric Company, Syracuse, NY (US);
Abstract
A hybrid interconnection structure is disclosed having application to the fine pitch interconnection of delicate semiconductor chips. The invention entails the use of a beam lead interconnect in which patterned conductor runs are provided on the upper surface of a silicon chip. The conductor runs extend beyond the chip to form a paired set of beam leads. One set of beam leads makes contact with terminals on the upper surface of one chip and the other set of beam leads makes contact with terminals on the upper surface of another chip. The interconnect chip is set on a substrate common to the interconnected chips with its top surface slightly (normally less than 1-2 mils) above the top surfaces of the interconnected chips. This limits any downward deformation of the beam leads in the bonding process to insure reliability of the bond for fine pitch application. The invention has specific application to arrays of infrared detectors in which interconnections are provided between a delicate light sensing chip of mercury cadmium telluride or indium antimonide and more rugged readout integrated circuits, usually of silicon.