The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 1991
Filed:
Jul. 05, 1989
Nippondenso Co., Ltd., , JP;
Abstract
A first PSG film having a control hole is formed on a silicon substrate formed having a circuit, and a first aluminum alloy line layer resistive to stress migration made of Al-Si alloy is formed on the first PSG film, so as to electrically contact, via the contact hole, the surface of a semiconductor substrate. The alloy line layer is formed by use of a sputtering method, and the crystal face is oriented, mainly in the (111) plane, by controlling the substrate temperature at the time of sputtering, as well as the Ar gas pressure, the alloy depositing rate, and the degree of vacuum prior to the commencement of alloy depositing. The grain size l of the alloy crystal is set so as to satisfy '(W/14)<l<W' with respect to the width W of the line formed by etching, and preferably to also satisfy '(W/4)<l<(W/1.5)'.