The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 1991
Filed:
Jul. 20, 1987
Applicant:
Inventors:
Martine Bonneau, Itteville, FR;
Gerard Boudon, Mennecy, FR;
Jean-Claude Le Garrec, Longjumeau, FR;
Pierre Mollier, Boissise Le Roi, FR;
Frank Wallart, Vert-Saint-Denis, FR;
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03K / ;
U.S. Cl.
CPC ...
307279 ; 307451 ; 307572 ; 307585 ; 307291 ; 377 61 ;
Abstract
The invention provides novel implementations of a latch cell in CMOS gate array technology to produce latch dissymmetry and permit a single ended data input. The dissymmetry is produced by increasing the output impedance of the second stage of the latch cell, which can be done, either in a DC or in an AC mode, or even in a mixed version of both modes.