The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 1991
Filed:
Sep. 28, 1989
Applicant:
Inventor:
Kunio Aomura, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 67 ; 437 31 ; 437 33 ; 156648 ;
Abstract
In a method of manufacturing semiconductor devices employing a trench isolation method in which trenches of different depth are formed in a silicon body and insulating materials are filled in these trenches, there is described the manufacturing method having a step of forming a first depth trench, filling with a first insulating material in the first depth trench, forming a second depth trench, which is formed relatively shallow and adjoins at least a part of the first trench and filling with a second insulating material in the second depth trench.