The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1991
Filed:
Jun. 02, 1989
Etienne G Colas, Asbury Park, NJ (US);
Herbert M Cox, Berkeley Heights, NJ (US);
Bell Communications Research, Inc., Livingston, NJ (US);
Abstract
A semiconductor structure having a face with macroscopic parallel steps and its method of making. The structure is formed by cutting a face on a crystal at a vicinal angle, that is, being misoriented from a major crystal face by a few degrees. Atomic sized microsteps are formed in the vicinal face. Parallel grooves or other regular irregularities are etched in the vicinal face. Subsequent epitaxial growth causes the microsteps to coalesce into macroscopic steps. Alternatively, etching or annealing can accomplish the same coalescing. Novel electronic structures can be fabricated on the stepped structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile