The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1991
Filed:
Aug. 21, 1989
Applicant:
Inventors:
Kunio Suzuki, Tokyo, JP;
Takeshi Fukada, Tokyo, JP;
Mikio Kinka, Kanagawa, JP;
Masayoshi Abe, Tokyo, JP;
Katsuhiko Shibata, Hamamatsu, JP;
Masato Susukida, Atsugi, JP;
Noriya Ishida, Hase-Atsugi, JP;
Akemi Satake, Hase-Atsugi, JP;
Yasuyuki Arai, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 39 ; 427 38 ; 156643 ;
Abstract
An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.