The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1991
Filed:
Sep. 01, 1989
Takayuki Yamada, Saga, JP;
Takeshi Kii, Saga, JP;
Kyushu Electronic Metal Co., Ltd., Saga, JP;
Osaka Titanium Co., Ltd., Hyogo, JP;
Abstract
A susceptor for use in a vertical vapor-phase growth system designed to heat substrates by means of heat transferred and radiated from a susceptor heated to cause vapor-phase growth on the substrates. The susceptor has a large number of spot-faced portions for receiving substrates, respectively. Each spot-faced portion has a concentrical circular ridge to define a pair of inner and outer spaces at the inner and outer sides, respectively, of the ridge, each of the inner and outer spaces having a concave bottom having a circular radial section, so that a substrate is supported by the circular ridge. Thus, the substrate is uniformly heated by means of the RF induction heat from the susceptor, so that generation of a thermal stress exceeding the critical strength of the substrate is suppressed and substantially no slip occurs. Since silicon that is formed during a vapor-phase growth reaction is deposited on the bottom of the outer space, it is possible to prevent deposition of silicon on the periphery of the reverse side of the substrate.