The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 1991
Filed:
Jun. 14, 1990
Applicant:
Inventors:
Friedhelm Bauer, Wurenlingen, CH;
Thomas Stockmeier, Wurenlingen, CH;
Assignee:
Asea Brown Boveri Ltd., Baden, CH;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 234 ; 357 2314 ; 357 38 ; 357 43 ; 357 86 ;
Abstract
In an MOS-controlled bipolar power semiconductor component, a recombination layer (10), which is doped with the same polarity as the base layer but more highly, is inserted, starting with the structure of an IGBT, into the base layer between anode (A) and cathode (K), which recombination layer divides the base layer into an upper and lower base layer (7a and 7b, respectively). The resultant structure forms a series circuit of MOSFET (T) and PIN diode (D) which is free of latch-up and provides the possibility of higher blocking voltages.