The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 1991
Filed:
Dec. 14, 1988
Applicant:
Inventor:
Patrice Gamand, Yerres, FR;
Assignee:
U.S. Philips Corp., New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03B / ; H01L / ;
U.S. Cl.
CPC ...
307304 ; 307491 ; 330286 ; 330277 ; 330 54 ; 357 41 ; 3311 / ;
Abstract
A high-frequency circuit includes a field-effect transistor having a gate electrode for receiving a high-frequency input signal, a source electrode and a drain electrode. Substantial improvements in both maximum gain and high-frequency performance are achieved by providing an input or output terminal at one end of each electrode, and terminating at least one of the electrodes with an appropriate impedance at its second end.
Quick Actions:
Gamand, Patrice. (1991). High-frequency circuit having a loaded field-effect transistor (U.S. Patent No. 4985642). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4985642
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile