The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 1991
Filed:
Sep. 02, 1988
Siang P Kwok, Colorado Springs, CO (US);
Ford Microelectronics, Inc., Colorado Springs, CO (US);
Abstract
A method of making a semiconductor device with self-aligned ohmic contacts which exhibits substantially reduced shadowing. The gate material is covered with a layer of gate mask material. The gate mask material is selectively removed to form a gate mask having sidewalls with slope profiles of an inclination sufficient to avoid maximum shadow encroachment for subsequent material depositions. Gate mask material is characterized by the sidewalls having an angularity relative to the surface of the substrate which is at least as great as the angle of evaporative deposition of ohmic contact material from a point evaporative source to the extreme gate position on the substrate.