The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1991
Filed:
Feb. 04, 1988
Shin-ichi Imai, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A floating diffusion region and a drain region are formed separately from each other in a substrate. A reset electrode is arranged above an area located between the drain region and the floating diffusion region. A voltage step-up circuit having a reference voltage generator receiving a power source voltage for generating a reference voltage and a step-up circuit receiving a clock pulse for applying a voltage level of the clock pulse to the reference voltage applies a voltage to the drain region. The gate of a conversion E type MOS transistor for converting and outputting the charge stored in the floating diffusion region to a signal having a voltage level proportional to the charge amount is connected to the floating diffusion region. The reference voltage generator has D type MOS transistor and E type MOS transistor connected in cascade for producing the reference voltage of the value corresponding to the variation from a process center of the manufacturing process of this charge transfer device. The D type MOS transsitor has the same conductivity type and construction as the MOS transistor formed of the reset electrode, the floating diffusion region and the drain region. The E type MOS transistor has the same conductivity type as the conversion E type MOS transistor.