The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1991
Filed:
Feb. 20, 1990
Michihiro Yamada, Hyogo, JP;
Hiroshi Miyamoto, Hyogo, JP;
Tadato Yamagata, Hyogo, JP;
Shigeru Mori, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention comprises a field oxide film formed on a silicon substrate, an underlying film of polycrystal silicon formed on a portion thereof and an insulating film formed so as to cover the field oxide film comprising the underlying film. A surface stepped portion of the insulating film is formed by a portion with an underlying film and a portion without an underlying film under the insulating film, and a blowout portion of a fuse is formed along the surface stepped portion. There are terminal portions at both ends of the blowout portion of the fuse and an aluminum line is connected thereto. In addition, the whole portions comprising the fuse portion are covered with another insulating film and the whole is protected. The fuse is employed as one example in a redundancy circuit of a MOS dynamic RAM having redundancy memory cells.