The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1991
Filed:
Mar. 20, 1987
Michio Yamamura, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A solid state imager device having a semiconductor substrate which includes a substrate region of a first conductivity type, a light receiving area of a second conductivity type forming a light receiving section, a charge transfer section and a low impurity concentration region arranged under and contacting with the light receiving area and between the light receiving area and the substrate region, a forward electrode formed on the semiconductor substrate through a dielectric layer, and a charge transfer control electrode formed on the dielectric layer between the light receiving section and the charge transfer section, wherein the forward electrode is supplied with a voltage for forming a charge storage layer on a boundary plane between the dielectric layer and the forward electrode, and the edge of the transfer control electrode at the side of the light receiving area substantially coincides with the edge of the light receiving area at a side facing to the charge transfer section.