The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1991
Filed:
Jul. 28, 1989
Michael Hack, Mountain View, CA (US);
John G Shaw, Portola Valley, CA (US);
Xerox Corporation, Stamford, CT (US);
Abstract
A high voltage thin film transistor comprising an amorphous semiconductor charge transport layer, laterally disposed source and drain electrodes, a first control electrode with one edge laterally overlapping the source electrode and an other edge laterally spaced from the drain electrode. A source of high potential is applied to the drain electrode and a source of low potential is applied to the first control electrode in a time varying manner so as to form an accumulation channel in the charge transport layer, opposite to the first control electrode. Device performance is improved by including a second control electrode disposed in the same plane as the first control electrode and biased for preventing the formation of defects within the charge transport layer adjacent the other edge.