The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 1991

Filed:

Dec. 21, 1988
Applicant:
Inventors:

Akira Ishizu, Amagasaki, JP;

Tadashi Nishimura, Itami, JP;

Yasuo Inoue, Itami, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 237 ; 357 59 ; 357-2 ; 350338 ; 350336 ; 3503 / ; 350342 ;
Abstract

A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer over the pattern of the metal thin film by laser CVD.


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