The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 1991
Filed:
Dec. 20, 1989
Il S Hyun, Seoul, KR;
Hae S Park, Seoul, KR;
Chung G Choi, Seoul, KR;
Ho G Ryoo, Seoul, KR;
Jai O Koh, Kyungki-Do, KR;
Sang I Kim, Seoul, KR;
Sung K Park, Kyungki-Do, KR;
Yung M Koo, Seoul, KR;
Young I Kim, Seoul, KR;
Sea C Kim, Seoul, KR;
Hyundai Electronics Industries, Co., Ltd., Kyungki, KR;
Abstract
A method for curing spin-on-glass formed on a wafer film which insulates the metal layers and flattens any step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device which comprises establishing a predetermined initial temperature in a heating chamber with an ultraviolet light source. A wafer, on which a SOG film to be cured is formed, is then introdued into the heated chamber and the temperature gradually increased to a predetermined maximum temperature. The SOG film is irradiated with ultraviolet light at a predetermined wavelength simultaneously with the application of heat at the maximum temperature for a predetermined time. The wafer is then cooled.