logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4983249 B1

PDFFull Text
Date of Patent:
Jan. 08, 1991

Filed:

Mar. 09, 1989

Method for producing semiconductive single crystal

Applicant:
Inventors:

Tsunemasa Taguchi, Suita, JP;

Hirokuni Nanba, Osaka, JP;

Assignees:

Production Engineering Association, Osaka, JP;

Sumitomo Electric Industries, Ltd., Osaka, JP;

Attorney:

Cushman, Darby and Cushman

Primary Examiner:

Gary P Straub

Int. Cl.
CPC ...
C30G / ; C30G / ; C30G / ; C30G / ;
U.S. Cl.
CPC ...
156603 ; 156610 ; 156612 ; 156613 ; 156D / ; 156D / ;
Abstract

A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250.degree. C. to 450.degree. C. while supplying a gaseous organozinc compound, H.sub.2 Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.

Find Patent Forward Citations

Taguchi, Tsunemasa. (1991). Method for producing semiconductive single crystal (U.S. Patent No. 4983249). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4983249

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…