The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 1991
Filed:
May. 11, 1988
Applicant:
Inventor:
Hideshi Miyatake, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365203 ; 365210 ;
Abstract
A DRAM comprises equalizing capacitance for equalizing the difference between a potential on a bit line to which a selected memory cell is connected and a potential on a reference bit line paired with the bit line when the selected memory cell stores 'H' information and that when the selected memory cell stores 'L' information, before sensing operation is started. The amplitude of a potential on a selected word line is at an operating power-supply voltage Vcc level of the DRAM.