The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 1991
Filed:
Dec. 05, 1988
Lal Sood, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A single-ended sense amplifier, for fast sensing from a precharged low condition, is provided. In the precharge mode, the amplifier discharges the sensing node to ground, and charges a bias node to a first predetermined voltage. This bias node modulates the current drive capabilities of the first and second charge transistors. Once the sense amplifier enters the sensing mode, the voltage at the bias node causes the first charge transistor to rapidly supply a substantial amount of current to the sensing node. If the selected memory cell is in the conducting state, the voltage at the sense node is discharged to ground and the amplifier output is a low-voltage, indicating the detection of a logic '0' state. Conversely, if the selected memory cell is in a non-conducting state, the voltage at the sense node increases beyond a second predetermined voltage, and the amplifier output is a high-voltage, indicating the detection of a logic '1'. The amplifier design eliminates the requirement for depletion mode transistors and the typical precharge/discharge scheme associated with their use. Accordingly, the self-biased sensing structure optimizes sensing speed, while reducing the power consumption of the amplifier.