The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1990
Filed:
Jun. 05, 1989
Hiroki Hozumi, Kanagawa, JP;
Minoru Nakamura, Kanagawa, JP;
Hiroyuki Miwa, Kanagawa, JP;
Akio Kayanuma, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In a semiconductor device having trench-shaped element isolating regions formed in a semiconductor body and also a conductive layer extending on each element isolating region and connected to an impurity diffusion region of the semiconductor body, there is formed an insulator layer region between an extension of the conductive layer and the element isolating region, and the insulator layer region is buried in the surface portion of the semiconductor body. In such construction, the insulation space between the conductive layer and the semiconductor body can be increased while the distance between the element isolating region and the impurity diffusion region can be shortened to consequently diminish the parasitic capacitance between the conductive layer and the semiconductor body, hence attaining a faster operation in the semiconductor device. When the present invention is applied to a bipolar transistor integrated circuit, a superfast operation is ensured due to the reduction of the base-to-collector capacitance.