The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1990
Filed:
May. 15, 1990
Applicant:
Inventor:
Hiroki Muroga, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 86 ;
Abstract
Diffusion layers are formed in a surface region of an N-type substrate. The diffusion layers are interconnected by means of an Al wiring layer. A P-well is formed in the substrate. A power source potential is connected to the substrate and a reference potential is connected to the P-well 17. The Al wiring layer is connected to the power source potential via the substrate to detect the power source potential.