The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1990
Filed:
Feb. 16, 1988
Yukio Takasaki, Kawasaki, JP;
Kazutaka Tsuji, Hachioji, JP;
Tatsuo Makishima, Mitaka, JP;
Tadaaki Hirai, Koganei, JP;
Sachio Ishioka, Burlingame, CA (US);
Tatsuro Kawamura, Tama, JP;
Keiichi Shidara, Tama, JP;
Eikyu Hiruma, Komae, JP;
Kenkichi Tanioka, Tokyo, JP;
Junichi Yamazaki, Kawasaki, JP;
Kenji Sameshima, Hachioji, JP;
Hirokazu Matsubara, Tokyo, JP;
Kazuhisa Taketoshi, Sagamihara, JP;
Hitachi, Ltd., Tokyo, JP;
Nippon Hoso Kyokai, Tokyo, JP;
Abstract
A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.