The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1990
Filed:
Mar. 07, 1989
Nobuyuki Tokunaga, Ube, JP;
Yasushi Kita, Ube, JP;
Central Glass Company, Limited, Ube, JP;
Abstract
The invention relates to a chemical vapor deposition (CVD) method for forming tungsten carbide, W.sub.3 C, by subjecting a gas mixture of tungsten hexafluoride, hydrogen and an aromatic hydrocarbon, e.g. benzene, to vapor phase reaction at an elevated temperature. The reaction temperature can be lowered to the extent of 250.degree. C. and the reaction can be carried out even at normal pressure, not necessarily under reduced pressure, by proportioning tungsten hexafluoride, hydrogen and the hydrocarbon such that in the gas mixture the atomic ratio of C to W falls in the range from 2 to 10 while the atomic ratio of H to C is not lower than 3. By this method a W.sub.3 C film excellent in glossiness can be deposited on various metal parts without adversely affecting the metal parts by the elevated temperature.