The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 1990
Filed:
Mar. 05, 1990
Applicant:
Inventors:
Shuzo Fujimura, Tokyo, JP;
Kenichi Hikazutani, Kuwana, JP;
Assignee:
Fujitsu Limited, Kawasaki, US;
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; B29C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 134-1 ; 156646 ; 156651 ; 156655 ; 1566591 ; 156668 ; 156345 ; 20419236 ;
Abstract
A method removes a first layer of an organic matter which is formed on a second layer, where the first layer is subjected to an ion implantation. The method includes the steps of generating a plasma by exciting a gas which includes H.sub.2 O using a high-frequency energy source, and removing the first layer within the plasma.