The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 1990
Filed:
Jan. 18, 1989
Marco Siligoni, Vittuone, IT;
Flavio Villa, Milan, IT;
SGS-Thomson Microelectronics S.r.l., Milan, IT;
Abstract
A vertical, isolated-collector transistor of the pnp type comprises an island doped similarly to the collector region and formed in the surface epitaxial layer of the transistor between that collector region and one of the isolation zones. That island extends in depth to penetrate a similarly doped intermediate region and short out the epitaxial layer included between the isolating layer and the collector region so as to suppress the effects of active parasitic junction components by holding a transistor and a silicon-controlled rectifier of parasitic types, as nesting within the structure of the vertical pnp transistor, in a cut-off state.