The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 1990
Filed:
Oct. 31, 1989
David Hoff, San Jose, CA (US);
Saroj Pathak, Los Altos Hills, CA (US);
Cypress Semiconductor Corp., San Jose, CA (US);
Abstract
A circuit for compensating for MOS device response to supply voltage variations, as well as temperature and process variations, in an integrated circuit device. The compensation circuit produces a reference voltage which modulates the gate bias voltage of a MOS transistor such that the gate-to-source bias of the MOS transistor is varied to compensate for variations in the supply voltage as well as for variations in the temperature and manufacturing process. The circuit pulls up the reference voltage toward the supply voltage as the supply increases, thereby increasing the gate drive on the MOS transistor. The circuit provides compensation for both AC and DC supply variations. The MOS transistor is used to modulate the available current sinking capability in an IC device output buffer, such that as the MOS gate drive increases, the current sinking capability is reduced, thereby slowing the output state transitions as the supply increases, and reducing noise caused by supply variations.