The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 1990
Filed:
Jun. 16, 1988
Bruce D Rosenthal, Sunnyvale, CA (US);
Teledyne Industries, Inc., Mountain View, CA (US);
Abstract
A high-voltage MOS transistor structure and the manner of its fabrication are disclosed. The transistor structure is fabricated at the surface of a semiconductor layer or substrate where the structure includes first and second regions provided at the surface spaced apart from one another by an intervening portion of the semiconductor layer. The first and second regions are of a predetermined conductivity type. A third region is provided in the semiconductor layer adjacent the first region. The third region extends from the first region partially across the intervening portion of the semiconductor layer at the substrate surface toward to second region and then extends into the semiconductor layer under the first region. A channel is thus defined between the third region and the second region. The channel interface junction of third region defines an arc curving under the first region. The third region is also of the predetermined conductivity.