The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 1990
Filed:
Mar. 23, 1989
Kazuyuki Sawada, Moriguchi, JP;
Hisashi Ogawa, Katano, JP;
Kohsaku Yano, Osaka, JP;
Tsutomu Fujita, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method is provided for producing a semiconductor device characterized by filling hollows having a high aspect ratio with a semiconductor film doped with impurities as dopants and an undoped semiconductor film, given that the doped polycrystalline Si film produced by thermal decomposition of reactive gases mixed with impurity gases and the undoped polycrystalline Si film produced by thermal decomposition of reactive gases containing no impurity gas have different step coverage characteristics from each other. The method allows uniform distribution of dopants as well as improvement of processing throughput by forming sequentially the two types of semiconductor films in one reaction chamber.