The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 1990
Filed:
Jul. 24, 1989
Minoru Inoue, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A titanium nitride barrier layer of 50 to 200 nm in thickness is fabricated between a silicon substrate and an aluminum electrode layer of an IC device by reactive sputtering performed in a mixed gas including oxygen in a proportion of 1 to 5% by volume relative to other gases, comprising an inert gas and a reactive gas, providing the temperature of the silicon substrate at 350.degree. to 550.degree. C. during the reactive sputtering, so that the product has a failure rate, indicating the property of preventing mutual diffusion of silicon and aluminum atoms from occurring, of less than 1% and a resistivity less than 100 .mu..OMEGA..cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile