The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 1990
Filed:
Feb. 22, 1989
Applicant:
Inventor:
Friedhelm Bauer, Wu, CH;
Assignee:
Asea Brown Boveri Ltd., Baden, CH;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 39 ; 357 34 ; 357 234 ; 357 67 ; 357 86 ; 357 51 ; 357 59 ;
Abstract
In an IGT (Insulated Gate Transistor), the short-circuiting between the n-type regions (5c) and the p-type regions (4b) of the n-type emitter layer or p-type base layer respectively is produced by a buried conducting layer (12), specifically in the form of a metal silicide layer. Regardless of the spacing between cathode contact (8) and gate (7), the length of the n-type regions (5c) can thereby be reduced to such an extent that latching-up of the component is virtually impossible.