The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 1990
Filed:
May. 25, 1989
Christophe Guedon, Lesigny, FR;
Jean-Louis Gentner, Caen, FR;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing a semiconductor device comprising at least the step of forming by a so-called method of deposition from the chloride vapour phase two superimposed epitaxial layers, the lower layer being made of a ternary compound and the upper layer being made of a binary compound, both of a semiconductor material of the III-V group, characterized in that the operating conditions of deposition temperature and molar fractions of the compounds required to form the layers are chosen so that both the lower layer of ternary material and the upper layer of binary material have before, during and after the transient state corresponding to the passage from the lower layer to the upper layer a maximum rate of coverage with chlorine (Cl) atoms. Application: hetero-structure GaInAs/InP for optoelectronic integrated circuits.