The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 1990
Filed:
Dec. 15, 1989
Applicant:
Inventors:
Sharka M Prokes, Columbia, MD (US);
Wen F Tseng, Sandy Spring, MD (US);
Aristos Christou, Springfield, VA (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437131 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 148 334 ; 156603 ; 437 82 ; 437126 ; 437247 ; 437973 ; 437976 ;
Abstract
Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on a silicon wafer. The amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precaustions need be taken to ensure a clean amorphous Si-Ge/Si interface.
Quick Actions:
Prokes, Sharka. (1990). Formation of epitaxial si-ge heterostructures by solid phase epitaxy (U.S. Patent No. 4975387). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4975387
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile