The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1990
Filed:
Jan. 23, 1989
Akiko Gomyo, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a visible light semiconductor laser with (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x .ltoreq.1) crystal layers and a process for growing an(Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x.ltoreq.1) crystal, a GaAs substrate on which (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P. As a result, a bandgap energy Eg of the (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio.