The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1990
Filed:
Aug. 23, 1988
Applicant:
Inventor:
Hamid Hemmati, Encino, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 41 ; 372 71 ; 372 75 ;
Abstract
A Ho:YLF crystal including Tm as sensitizers for the activator Ho, is optically pumped with a semiconductor diode laser array to generate 2.1 .mu.m radiation with a pump power to output power of efficiency as high as 68%. The prior-art dual sensitizer system of Er and Tm requires cooling, such as by LN.sub.2, but by using Tm alone and decreasing the concentrations of Tm and Ho, and decreasing the length of the laser rod to about 1 cm, it has been demonstrated that laser operation can be obtained from a temperature of 77.degree. K. with an efficiency as high as 68% up to ambient room temperature with an efficiency at that temperature as high as 9%.