The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1990
Filed:
Aug. 19, 1988
Applicant:
Inventor:
Toshitaka Torikai, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 16 ; 357 52 ; 357 90 ;
Abstract
A planar type heterostructure avalanche photodiode comprises first and second semiconductor layers having first and second forbidden energy gaps. The second forbidden energy gap is larger than the first forbidden energy gap. In the second semiconductor layer, the second forbidden energy gap is increased as a distance is increased from a hetero-interface between the first and second semiconductor layers, and a pn junction is provided. A cross sectional shape of the outer periphery of the pn junction is defined by a curvature dependent on the increase of the second forbidden energy gap.