The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 1990
Filed:
Dec. 27, 1988
Manfred J Schindler, Newton, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A distributed circuit includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, with a first portion, or a first channel, of such FETS having gate electrodes and drain electrodes successively coupled between a first input terminal and a first ouput terminal, and a second like portion or a second channel of such FETS having gate electrodes and drain electrodes successively coupled between the first input terminal and a second output terminal. Separate bias circuits are provided to the input electrodes and the output electrodes of the first and second channels. Bias signals fed to the input bias circuits and coupled to the input electrodes to place the FETS in an 'on' state to provide gain to r.f. input signals fed thereto, or in a 'pinch-off' state to isolate r.f. signals fed to the input electrodes of the FETS. Accordingly, a 1.times.2 signal splitter or a 1.times.2 switch which provides gain to a signal is provided.