The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 1990

Filed:

Nov. 06, 1989
Applicant:
Inventor:

Hubertus J Den Blanken, Eindhoven, NL;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437189 ; 437 40 ; 437 59 ; 437 69 ; 437183 ; 437190 ; 437192 ; 437228 ; 148D / ; 148D / ; 357 71 ;
Abstract

A method of manufacturing a semiconductor device, in which a first pattern of conductors (20), an isolating layer (21) and a second pattern of conductors (22) are successively provided on a surface (2) of a semiconductor body (1) adjoined by a number of isolation regions (4, 10) and a number of semiconductor regions (3). Mutual contacts are established between the two patterns (20, 22) and these contacts are located both above a semiconductor region (3) and above an adjoining isolation region (4, 10) by forming conductive pillars (44) in the first pattern (20), exposing a tip (51) of the pillars (44) after an isolating layer (50) has been provided and providing the second pattern (22) over the tip (51) of the pillars (44). Thus, a large amount is saved on the surface (2).


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