The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 1990
Filed:
Jan. 11, 1988
Elizabeth M Alexander, Eindhoven, NL;
Jan Haisma, Eindhoven, NL;
Theodorus Michielsen, Eindhoven, NL;
Johannes Van Der Velden, Eindhoven, NL;
Johannes F Verhoeven, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
In a method of manufacturing a semiconductor device of the 'semiconductor on insulator' type comprising at least one carrier body and a monocrystalline semiconductor body, in a major surface (2) of a monocrystalline semiconductor body (1) grooves (3) are provided having a predetermined depth. The surface provided with grooves is coated with a layer (4) of material resistant to polishing; and this layer is coated with a layer (5) of a chemomechanically polishable material having a layer thickness exceeding the groove depth, the latter layer (5) being polished to flatness and smoothness. The polished surface of the semiconductor body (1) is connected to a smooth flat major surface of a carrier body (6). Subsequently, the semiconductor body (1) is made thin, at least the last part of this operation consisting of a polishing step, which terminates on the layer (4) of material resistant to polishing so that mutually insulated 'semiconductor an insulator' regions are obtained, the thickness of the semiconductor regions being equal to the depth of the grooves.