The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 1990

Filed:

Mar. 01, 1989
Applicant:
Inventors:

Takayoshi Arai, Nagahama, JP;

Masahiro Kanai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 39 ; 427 38 ; 427 451 ; 118723 ; 430 84 ;
Abstract

An improved process for forming a functional deposited film by HR-CVD method which comprises disposing an electroconductive substrate or an insulating substrate at least one surface of which being applied with electroconductive treatment on a substrate holder in a substantially enclosed film-forming chamber, introducing a precursor formed in an activation chamber disposed separately from the film-forming chamber which is capable of contributing to the formation of the deposited film and an active species formed in another activation chamber disposed separately from the film-forming chamber and the activation chamber which is capable of chemically reacting with the precursor respectively and separately into said film-forming chamber, and chemically reacting them to thereby form a functional deposited film on the substrate, wherein a voltage in the range of from -5 V to -100 V is applied to the electroconductive substrate or the surface of the insulating substrate applied with the electroconductive treatment.


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