The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 1990
Filed:
Aug. 23, 1988
Applicant:
Inventor:
Per Svedberg, Vallingby, SE;
Assignee:
Asea Brown Boveri AB, Vaster.ang.s, SE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357 20 ; 357-4 ;
Abstract
A MOS transistor is formed in a silicon layer applied on an insulating base. The channel region of the transistor has a weakly doped region located nearest the surface of the layer and a more heavily doped region nearest the base. The latter region extends in under the source region of the transistor and is connected to the source contact of the transistor via a highly doped region of the same conduction type. The more heavily doped region is doped with a doping dose of at least 2.10.sup.12 cm.sup.-2.