The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 1990
Filed:
Mar. 21, 1988
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 236 ; 357 234 ; 357 2311 ; 357 41 ; 357 51 ; 357 55 ; 357 59 ;
Abstract
A dynamic random access memory device including one-transistor type memory cells each having a trench capacitor is disclosed. An impurity region of a conductivity type opposite to the substrate and having a net-like plane shape is provided in an inner portion of the substrate, and the impurity region is led-out at a part to the major surface of the substrate. A trench is formed in the substrate from the major surface into the impurity region so that a wall section of the trench is constituted by the impurity region. A dielectric film of the capacitor is formed on the wall section, and a capacitor electrode is formed on the dielectric film and connected to source or drain region of the transistor.