The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 1990
Filed:
May. 18, 1989
Applicant:
Inventors:
Toshihiko Ryuo, Gunma, JP;
Satoru Fukuda, Gunma, JP;
Tatsuo Mori, Gunma, JP;
Masayuki Tanno, Gunma, JP;
Assignee:
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B / ; H03H / ; B32B / ;
U.S. Cl.
CPC ...
3311 / ; 333193 ; 428693 ;
Abstract
An improved epitaxial single crystal wafer suitable as a working element of magnetostatic wave devices is proposed which comprises a substrate single crystal wafer of a rare earth gallium garnet, e.g., gadolinium gallium garnet, neodymium gallium garnet and samarium gallium garnet, and an epitaxial layer formed thereon having a chemical composition, different from conventional yttrium iron garnet, Y.sub.3 Fe.sub.5 O.sub.12, of the formula