The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 1990
Filed:
Sep. 16, 1988
Applicant:
Inventor:
Toshihiko Hamasaki, Kanagawa, JP;
Assignee:
Kabushiki Kasiha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 24 ; 437 26 ; 437 31 ;
Abstract
An emitter of a bipolar transistor is formed by depositing a polycrystalline or amorphous film on a substrate and monocrystallizing the deposited film. Further, the base region of the bipolar transistor is formed by ion implantation through the emitter region.