The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 1990
Filed:
Dec. 07, 1989
Akiyoshi Kohno, Tokyo, JP;
Atsushi Mikoshiba, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An image sensor is fabricated on a semiconductor substrate and comprises a well formed in the substrate, photo sensing elements formed in the well, vertical shift registors coupled to the columns of the photo sensing elements, a horizontal shift registor coupled to the vertical shift registors and a photo shield plate exposing the photo sensing elements to optical images, in which the photo shield plate remains in a first voltage level for restriction of production of ineffectual electric charges but is biased to a second voltage level for promoting the production of effectual electric charges after the semiconductor substrate is biased so as to allow a punch-through phenomenon to take place for discharging the ineffectual electric charges from the photo-sensing elements to the substrate, so that a variable electronic shutter is achieved under biasing the photo shield plate and the substrate without an extremely high voltage level.